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advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 1 general description the AP2821 is an integrated high-side power switch that consists of ttl compatible enables input, a charge pump, and n-chan nel mosfet. the switch?s low rds (on), 120m , meets usb voltage drop requirements. it includes soft-start to limit inrush current, over-current prot ection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. under voltage lockout (uvlo) function is used to ensure the device remain off unless there is a valid input voltage present. and no reverse current when power off, with shutdown pull-low resistor to discharge the output capacitor when en is disable. the AP2821 is available in standard package of sot-23-5. features ? low mosfet on resistance: 120m @v in =5.0v ? compliant to usb specifications ? operating voltage range: 2.7v to 5.5v ? low supply current: 35 a (typ.) ? low shutdown current: <1 a ? current limit with fold-back: 2a ? under-voltage lockout ? soft start-up ? over-current protection ? over temperature protection ? load short protection with fold-back ? no reverse current when power off ? pass system esd: iec61000-4-2 16kv (air discharge) and 8kv (contact discharge) on usb connector applications ? usb power management ? usb bus/self powered hubs ? hot-plug power supplies ? battery-charger circuits ? notebooks, motherboard pcs figure 1. package type of AP2821 sot-23-5
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 2 pin configuration k package sot-23-5 figure 2. pin configurat ion of AP2821 (top view) pin descriptions pin no. name descriptions 1 vout switch output voltage 2 gnd ground 3 en chip enable control input, active high 4, 5 vin supply input pin
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 3 functional block diagram clock band gap reference uvlo gate control over current limiting thermal sense current sense cmp vin vout gnd en 3 2 4, 5 1 shutdown signal figure 3. functional block diagram of AP2821
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 4 ordering information AP2821 - circuit type package temperature range part number marking id packing type sot-23-5 -40 to 85 c AP2821ktr-g1 g4e tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. tr: tape & reel package k: sot-23-5 g1: green
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.0 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering,10 seconds) t lead 260 oc thermal resistance (junction to ambient) ja 235 oc/w esd (machine model) 200 v esd (human body model) 2000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.7 5.5 v ambient operation temperature range t a -40 85 c
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 6 electrical characteristics (v in =5.0v, c in =4.7 f, c out =4.7 f, typical t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit input voltage range v in 2.7 5.5 v switch on resistance r ds(on) v in =5v, i out =0.5a 120 140 m current limit i limit v out =4.0v 1.5 2.0 2.8 a supply current i supply v in =5v, r load open 35 65 a fold-back short current i short v out =0v 1.5 a shutdown supply current i shutdown v en =0v, shutdown mode 0.1 1 a output leakage current i leakage v en =0v, v out =0v 0.1 1 a enable high voltage v enh enable logic high 2.0 6.0 v enable low voltage v enl enable logic low 0 1.2 v enable pin input current i en force 0v to 5.0v at en pin 0 1.0 a under voltage lockou t threshold voltage v uvlo v in increasing from 0v 2.2 2.5 2.7 v under voltage hysteresis v uvlohy 0.2 v reverse current i reverse v en =0v, v out >v in 0.1 1.0 a shutdown pull low resistance r discharge v en is disable 100 250 output turn-on time t on from enable active to 90% o f output, r l =10 1.9 ms thermal shutdown temperature t otsd 145 o c thermal shutdown hysteresis t hyotsd 20 thermal resistance (junction to case) jc 70 oc/w
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 7 typical performance characteristics figure 4. supply current vs. input voltage figure 5. current limit vs. temperature figure 6. enable input threshold vs. te mperature figure 7. enab le input threshold vs. input voltage 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 t a =-40 o c t a =25 o c t a =85 o c input voltage (v) supply current ( a) v en =v in -40 -20 0 20 40 60 80 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 temperature ( o c) current limit (a) v in =5v -40-20 0 20406080 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 v in =5v v en rising v en falling temperature ( o c) enable input threshold (v) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v en rising v en falling enable input threshold (v) t a =25 o c input voltage (v)
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 8 typical performance characteristics (continued) figure 8. uvlo threshold voltage vs. temperature figure 9. uvlo function figure 10. switch-on resistance vs. input voltage figure 11. switch-on resistance vs. temperature -40-20 0 20406080 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 temperature ( o c) v in rising v in falling uvlo threshold (v) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 50 100 150 200 250 300 350 400 t a =-40 o c t a =25 o c t a =85 o c switch-on resistance (m ) input voltage (v) i out =1a -40-20 0 20406080 60 80 100 120 140 160 180 200 220 240 260 280 300 v in =3v v in =4v v in =5v temperature ( o c) switch-on resistance (m ) i out =1a 012345 0 1 2 3 4 5 input voltage (v) no load v in rising v in falling uvlo output voltage (v)
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 9 typical performance characteristics (continued) figure 12. output short to gnd current figure 13. output short to gnd current vs. input voltage vs. temperature figure 14. output voltage vs. output current figure 15. switch turn-on and rise time (v in =3.3v, c out =4.7 f, no load) 3.03.54.04.55.05.5 1.0 1.2 1.4 1.6 1.8 2.0 output short to gnd current (a) input voltage (v) t a =25 o c 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 output current (a) output voltage (v) v in =5v v en =5v t a =25 o c -40-20 0 20406080 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 temperature ( o c) output short to gnd current (a) v in =5v v en =5v v en 5v/di v v out 1v/di v time 1ms/di v
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 10 typical performance characteristics (continued) figure 16. switch turn-on and rise time figure 17. switch turn-on and rise time (v in =5.0v, c out =4.7 f, no load) (v in =3.3v, c out =4.7 f, r l =10 ) figure 18. switch turn-on and rise time figure 19. switch turn-on and rise time (v in =5.0v, c out =4.7 f, r l =10 ) (v in =3.3v, c out =100 f, r l =10 ) v en 5v/di v v out 1v/di v time 1ms/di v v en 5v/di v v out 1v/di v i out 500ma / div time 1ms/di v v en 5v/di v v out 1v/di v i out 500ma /div v en 5v/di v v out 1v/di v i out 500ma /div time 1ms/di v time 1ms/di v
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) figure 20. switch turn-on and rise time figure 21. switch turn-off and fall time (v in =5.0v, c out =100 f, r l =10 ) (v in =3.3v, c out =4.7 f, no load) figure 22. switch turn-off and fall time figure 23. switch turn-off and fall time (v in =5.0v, c out =4.7 f, no load) (v in =3.3v, c out =100 f, no load) v en 5v/di v v out 1v/di v i out 500ma /div v en 5v/di v v out 1v/di v v out 1v/di v v out 1v/di v time 1ms/di v time 1ms/di v time 1ms/di v time 10ms/di v v en 5v/di v v en 5v/di v
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) figure 24. switch turn-off and fall time figure 25. switch turn-off and fall time (v in =5.0v, c out =100 f, no load) (v in =3.3v, c out =100 f, r l =10 ) figure 26. switch turn-off and fall time figure 27. resistance load inrush response (v in =5.0v, c out =100 f, r l =10 ) (c out =4.7 f, r l =1.65 ) v out 2v/di v i out 1a/di v time 100
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 13 typical performance characteristics (continued) figure 28. short-circuit current, figure 29. thermal shutdown response device enable into short (v in =5.0v, c out =4.7 f, r l =1.65 ) (v in =5.0v, c out =4.7 f) v en 5v/di v time 100ms/div v out 2v/di v i out 1a/di v time 200
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 14 typical application note 2: 4.7 f input capacitor is enough in most application cases. if the pcb trace of power rail to v in is long, larger input capacitor is necessary. figure 30. AP2821 typical application
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 15 mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.100(0.122) 1 . 7 0 0 ( 0 . 0 6 7 ) 3 . 0 0 0 ( 0 . 1 1 8 ) 0.500(0.020) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
advance datasheet high-side power distribution switch with enable AP2821 mar. 2013 rev 2. 0 bcd semiconductor manufacturing limited 16 mounting pad layout sot-23-5 e2 e1 y x g z dimensions z (mm)/(inch) g (mm)/(inch) x (mm)/(inch) y (mm)/(inch) e1 (mm)/(inch) e2 (mm)/(inch) value 3.600/0.142 1.600/0.063 0.700/0.028 1.000/0.039 0.950/0.037 1.900/0.075
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yishan road, shanghai 200233, china tel: +021-6485-1491, fa x: +86-021-5450-0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manu facturing co., ltd., shenzhen office unit a room 1203,skyworth bldg., gaoxin ave.1.s., nanshan district shenzhen 518057, china tel: +86-0755-8660-4900, fax: +86-0755-8660-4958 taiwan office (taipei) bcd semiconductor (taiwan) company limited 3f, no.17, lane 171, sec. 2, jiu-zong rd., ne i-hu dist., taipei(114), taiwan, r.o.c tel: +886-2-2656 2808 fax: +886-2-2656-2806/26562950 taiwan office (hsinchu) bcd semiconductor (taiwan) company limited 8f, no.176, sec. 2, gong-dao 5th road, east district hsinchu city 300, taiwan, r.o.c tel: +886-3-5160181, fax: +886-3-5160181 - headquarters bcd (shanghai) micro-electronics limited no. 1600, zi xing road, shanghai zizhu scie nce-based industrial park, 200241, p. r.c. tel: +86-021-2416-2266, fax: +86-021-2416-2277 usa office bcd semiconductor corp. 48460 kato road, fremont, ca 94538, usa tel: +1-510-668-1950 fax: +1-510-668-1990 korea office bcd semiconductor limited korea office. room 101-1112, digital-empire ii, 486 sin-dong, yeongtong-gu, suwon-city, gyeonggi-do, korea tel: +82-31-695-8430 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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